Description
CSD18540Q5B Texas Instruments - Yeehing Electronics
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.844 |
| 100 — 249 | 1.523 |
| 250 — 999 | 1.094 |
| 1,000 + | 0.58 |
The above prices are for reference only.
Specifications
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Id - Continuous Drain Current | 90 A |
| Rds On - Drain-Source Resistance | 5.3 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 52 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 150 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Packaging | Reel |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Series | OptiMOS 3 |
| Transistor Type | 1 N-Channel |
| Width | 6.22 mm |
| Brand | Infineon Technologies |
| Forward Transconductance - Min | 56 S |
| Fall Time | 10 ns |
| Product Type | MOSFET |
| Rise Time | 66 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 38 ns |
| Typical Turn-On Delay Time | 18 ns |
| Part # Aliases | G IPD053N08N3 SP001127818 |
| Unit Weight | 0.139332 oz |
For more information, please refer to datasheet
Documents
| CSD18540Q5B Datasheet |
More Information
This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.
