Description
CSD18540Q5BT Texas Instruments - Yeehing Electronics
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 2.213 |
100 — 249 | 1.828 |
250 — 999 | 1.313 |
1,000 + | 0.79 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSON-CLIP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 205 A |
Rds On - Drain-Source Resistance | 2.2 mOhms |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 41 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 188 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 6 mm |
Series | CSD18540Q5B |
Transistor Type | 1 N-Channel |
Width | 5 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 116 S |
Development Kit | BOOSTXL-DRV8305EVM, DRV8704EVM |
Fall Time | 3 ns |
Product Type | MOSFET |
Rise Time | 9 ns |
Factory Pack Quantity | 250 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 6 ns |
Unit Weight | 0.000847 oz |
For more information, please refer to datasheet
Documents
CSD18540Q5BT Datasheet |
More Information
This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package.