CSD18541F5 Texas Instruments - Yeehing Electronics

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.201
100 — 249	0.137
250 — 999	0.105
1,000 +	0.05

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	2.2 A
Rds On - Drain-Source Resistance	65 mOhms
Vgs th - Gate-Source Threshold Voltage	1.75 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	11 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Channel Mode	Enhancement
Tradename	PicoStar
Packaging	Reel
Height	0.35 mm
Length	1.53 mm
Series	CSD18541F5
Transistor Type	1 N-Channel
Width	0.77 mm
Brand	Texas Instruments
Fall Time	496 ns
Product Type	MOSFET
Rise Time	540 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	1076 ns
Typical Turn-On Delay Time	572 ns
Unit Weight	0.000025 oz

For more information, please refer to datasheet

Documents

CSD18541F5 Datasheet

More Information

This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.