CSD18543Q3AT


YeeHing #: Y012-CSD18543Q3AT
Inventory: 5400

Feel free to reach out to us for more information.
Click the button below to unveil exclusive discounts and delightful surprises.

Description

CSD18543Q3AT Texas Instruments - Yeehing Electronics

60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.739
100 — 249 0.568
250 — 999 0.418
1,000 + 0.17

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case VSONP-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 12 A
Rds On - Drain-Source Resistance 12 mOhms
Vgs th - Gate-Source Threshold Voltage 1.5 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 11.1 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 66 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 0.9 mm
Length 3.15 mm
Series CSD18543Q3A
Transistor Type 1 N-Channel
Width 3 mm
Brand Texas Instruments
Forward Transconductance - Min 40 S
Fall Time 4 ns
Product Type MOSFET
Rise Time 18 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 8 ns
Typical Turn-On Delay Time 9 ns
Unit Weight 0.000977 oz

For more information, please refer to datasheet

Documents

CSD18543Q3AT Datasheet

More Information

This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

You may also like

Recently viewed