Description
CSD19501KCS Texas Instruments - Yeehing Electronics
80-V, N channel NexFET™ power MOSFET, single TO-220, 6.6 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.523 |
| 100 — 249 | 1.258 |
| 250 — 999 | 0.904 |
| 1,000 + | 0.54 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 6.6 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 38 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 217 W |
| Configuration | Single |
| Tradename | NexFET |
| Packaging | Tube |
| Height | 16.51 mm |
| Length | 10.67 mm |
| Series | CSD19501KCS |
| Transistor Type | 1 N-Channel |
| Width | 4.7 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 137 S |
| Fall Time | 5 ns |
| Product Type | MOSFET |
| Rise Time | 15 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Unit Weight | 0.211644 oz |
For more information, please refer to datasheet
Documents
| CSD19501KCS Datasheet |
More Information
This 80 V, 5.5 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
