CSD19502Q5B


YeeHing #: Y012-CSD19502Q5B
Inventory: 5800

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Description

CSD19502Q5B Texas Instruments - Yeehing Electronics

80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.814
100 — 249 1.499
250 — 999 1.076
1,000 + 0.57

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 4.1 mOhms
Vgs th - Gate-Source Threshold Voltage 2.2 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 48 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 195 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 1 mm
Length 6 mm
Series CSD19502Q5B
Transistor Type 1 N-Channel
Width 5 mm
Brand Texas Instruments
Forward Transconductance - Min 88 S
Fall Time 7 ns
Product Type MOSFET
Rise Time 6 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 22 ns
Typical Turn-On Delay Time 8 ns
Unit Weight 0.004751 oz

For more information, please refer to datasheet

Documents

CSD19502Q5B Datasheet

More Information

This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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