Description
CSD19502Q5B Texas Instruments - Yeehing Electronics
80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.814 |
100 — 249 | 1.499 |
250 — 999 | 1.076 |
1,000 + | 0.57 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSON-Clip-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 4.1 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.2 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 48 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 195 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 6 mm |
Series | CSD19502Q5B |
Transistor Type | 1 N-Channel |
Width | 5 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 88 S |
Fall Time | 7 ns |
Product Type | MOSFET |
Rise Time | 6 ns |
Factory Pack Quantity | 250 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 8 ns |
Unit Weight | 0.004751 oz |
For more information, please refer to datasheet
Documents
CSD19502Q5B Datasheet |
More Information
This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.