CSD19503KCS


YeeHing #: Y012-CSD19503KCS
Inventory: 5400

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Description

CSD19503KCS Texas Instruments - Yeehing Electronics

80-V, N channel NexFET™ power MOSFET, single TO-220, 9.2 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.254
100 — 249 1.036
250 — 999 0.744
1,000 + 0.39

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 9.2 mOhms
Vgs th - Gate-Source Threshold Voltage 2.8 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 28 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 188 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Tube
Height 16.51 mm
Length 10.67 mm
Series CSD19503KCS
Transistor Type 1 N-Channel
Width 4.7 mm
Brand Texas Instruments
Forward Transconductance - Min 110 S
Fall Time 2 ns
Product Type MOSFET
Rise Time 3 ns
Factory Pack Quantity 50
Subcategory MOSFETs
Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 7 ns
Unit Weight 0.211644 oz

For more information, please refer to datasheet

Documents

CSD19503KCS Datasheet

More Information

This 80 V, 7.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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