CSD19505KCS


YeeHing #: Y012-CSD19505KCS
Inventory: 4600

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Description

CSD19505KCS Texas Instruments - Yeehing Electronics

80-V, N channel NexFET™ power MOSFET, single TO-220, 3.1 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 2.384
100 — 249 2.089
250 — 999 1.464
1,000 + 0.83

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 3.1 mOhms
Vgs th - Gate-Source Threshold Voltage 2.6 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 76 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 300 W
Configuration Single
Tradename NexFET
Packaging Tube
Height 16.51 mm
Length 10.67 mm
Series CSD19505KCS
Transistor Type 1 N-Channel
Width 4.7 mm
Brand Texas Instruments
Forward Transconductance - Min 262 S
Fall Time 6 ns
Product Type MOSFET
Rise Time 16 ns
Factory Pack Quantity 50
Subcategory MOSFETs
Unit Weight 0.211644 oz

For more information, please refer to datasheet

Documents

CSD19505KCS Datasheet

More Information

This 80 V, 2.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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