CSD19505KTTT


YeeHing #: Y012-CSD19505KTTT
Inventory: 6200

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Description

CSD19505KTTT Texas Instruments - Yeehing Electronics

80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 2.961
100 — 249 2.595
250 — 999 1.819
1,000 + 1.03

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS N
Technology Si
Mounting Style SMD/SMT
Package / Case TO-263-3
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 200 A
Rds On - Drain-Source Resistance 3.1 mOhms
Vgs th - Gate-Source Threshold Voltage 2.6 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 76 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 300 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 4.7 mm
Length 9.25 mm
Series CSD19505KTT
Transistor Type 1 N-Channel
Width 10.26
Brand Texas Instruments
Forward Transconductance - Min 262 S
Fall Time 3 ns
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 5 ns
Factory Pack Quantity 50
Subcategory MOSFETs
Typical Turn-Off Delay Time 22 ns
Typical Turn-On Delay Time 11 ns

For more information, please refer to datasheet

Documents

CSD19505KTTT Datasheet

More Information

This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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