Description
CSD19505KTTT Texas Instruments - Yeehing Electronics
80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 2.961 |
100 — 249 | 2.595 |
250 — 999 | 1.819 |
1,000 + | 1.03 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | N |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 200 A |
Rds On - Drain-Source Resistance | 3.1 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.6 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 76 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 300 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 4.7 mm |
Length | 9.25 mm |
Series | CSD19505KTT |
Transistor Type | 1 N-Channel |
Width | 10.26 |
Brand | Texas Instruments |
Forward Transconductance - Min | 262 S |
Fall Time | 3 ns |
Moisture Sensitive | Yes |
Product Type | MOSFET |
Rise Time | 5 ns |
Factory Pack Quantity | 50 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 22 ns |
Typical Turn-On Delay Time | 11 ns |
For more information, please refer to datasheet
Documents
CSD19505KTTT Datasheet |
More Information
This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.