Description
CSD19531Q5AT Texas Instruments - Yeehing Electronics
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 1.597 |
100 — 249 | 1.319 |
250 — 999 | 0.948 |
1,000 + | 0.50 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | E |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | VSONP-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 6.4 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2.7 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 37 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 3.3 W |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 1 mm |
Length | 6 mm |
Series | CSD19531Q5A |
Transistor Type | 1 N-Channel |
Type | NexFET Power MOSFET |
Width | 4.9 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 82 S |
Fall Time | 5.2 ns |
Product Type | MOSFET |
Rise Time | 5.8 ns |
Factory Pack Quantity | 250 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 18.4 ns |
Typical Turn-On Delay Time | 6 ns |
For more information, please refer to datasheet
Documents
CSD19531Q5AT Datasheet |
More Information
This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.