Description
CSD19532Q5BT Texas Instruments - Yeehing Electronics
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 2.048 |
| 100 — 249 | 1.795 |
| 250 — 999 | 1.258 |
| 1,000 + | 0.58 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-Clip-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 4.9 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 48 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 3.1 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 1 mm |
| Length | 6 mm |
| Series | CSD19532Q5B |
| Transistor Type | 1 N-Channel |
| Width | 5 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 84 S |
| Fall Time | 6 ns |
| Product Type | MOSFET |
| Rise Time | 6 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time | 7 ns |
| Unit Weight | 0.003714 oz |
For more information, please refer to datasheet
Documents
| CSD19532Q5BT Datasheet |
More Information
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
