CSD19532Q5BT


YeeHing #: Y012-CSD19532Q5BT

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Description

CSD19532Q5BT Texas Instruments - Yeehing Electronics

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 2.048
100 — 249 1.795
250 — 999 1.258
1,000 + 0.58

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-Clip-8
Number of Channels 1 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 4.9 mOhms
Vgs th - Gate-Source Threshold Voltage 2.6 V
Vgs - Gate-Source Voltage 20 V
Qg - Gate Charge 48 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.1 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 1 mm
Length 6 mm
Series CSD19532Q5B
Transistor Type 1 N-Channel
Width 5 mm
Brand Texas Instruments
Forward Transconductance - Min 84 S
Fall Time 6 ns
Product Type MOSFET
Rise Time 6 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 22 ns
Typical Turn-On Delay Time 7 ns
Unit Weight 0.003714 oz

For more information, please refer to datasheet

Documents

CSD19532Q5BT Datasheet

More Information

This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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