Description
CSD19536KTTT Texas Instruments - Yeehing Electronics
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 4.326 |
| 100 — 249 | 3.527 |
| 250 — 999 | 2.772 |
| 1,000 + | 1.65 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 272 A |
| Rds On - Drain-Source Resistance | 2.4 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 118 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 375 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 4.7 mm |
| Length | 9.25 mm |
| Series | CSD19536KTT |
| Transistor Type | 1 N-Channel |
| Width | 10.26 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 329 S |
| Fall Time | 6 ns |
| Moisture Sensitive | Yes |
| Product Type | MOSFET |
| Rise Time | 8 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 32 ns |
| Typical Turn-On Delay Time | 13 ns |
| Unit Weight | 0.068654 oz |
For more information, please refer to datasheet
Documents
| CSD19536KTTT Datasheet |
More Information
This 100-V, 2-mΩ, D2PAK (TO-263) NexFET power MOSFET is designed to minimize losses in power conversion applications.
