CSD19538Q3AT Texas Instruments - Yeehing Electronics

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 61 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.904
100 — 249	0.695
250 — 999	0.512
1,000 +	0.26

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSONP-8
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	15 A
Rds On - Drain-Source Resistance	61 mOhms
Vgs th - Gate-Source Threshold Voltage	3.2 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	4.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.8 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.9 mm
Length	3.15 mm
Series	CSD19538Q3A
Transistor Type	1 N-Channel
Width	3 mm
Brand	Texas Instruments
Fall Time	2 ns
Product Type	MOSFET
Rise Time	3 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	7 ns
Typical Turn-On Delay Time	5 ns

For more information, please refer to datasheet

Documents

CSD19538Q3AT Datasheet

More Information

This 100-V, 49-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize conduction losses and reduce board footprint in PoE applications.