CSD22202W15 Texas Instruments - Yeehing Electronics

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 12.2 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.44
100 — 249	0.338
250 — 999	0.249
1,000 +	0.12

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-9
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	17.4 mOhms
Vgs th - Gate-Source Threshold Voltage	800 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	6.5 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.5 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	1.5 mm
Series	CSD22202W15
Transistor Type	1 P-Channel
Width	1.5 mm
Brand	Texas Instruments
Fall Time	38 ns
Product Type	MOSFET
Rise Time	8.4 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	109 ns
Typical Turn-On Delay Time	10.4 ns
Unit Weight	0.000088 oz

For more information, please refer to datasheet

Documents

CSD22202W15 Datasheet

More Information

The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.