Description
CSD22204W Texas Instruments - Yeehing Electronics
-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.366 |
| 100 — 249 | 0.281 |
| 250 — 999 | 0.207 |
| 1,000 + | 0.09 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DSBGA-9 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Id - Continuous Drain Current | 5 A |
| Rds On - Drain-Source Resistance | 14 mOhms |
| Vgs - Gate-Source Voltage | 6 V |
| Pd - Power Dissipation | 1.7 W |
| Configuration | Single |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.62 mm |
| Length | 1.5 mm |
| Series | CSD22204W |
| Transistor Type | 1 P-Channel |
| Width | 1.5 mm |
| Brand | Texas Instruments |
| Product Type | MOSFET |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.000088 oz |
For more information, please refer to datasheet
Documents
| CSD22204W Datasheet |
More Information
This 8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
