CSD22205LT Texas Instruments - Yeehing Electronics

-8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.893
100 — 249	0.606
250 — 999	0.468
1,000 +	0.22

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-4
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	7.4 A
Rds On - Drain-Source Resistance	40 mOhms
Vgs th - Gate-Source Threshold Voltage	1.05 V
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	8.5 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	600 mW
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Series	CSD22205L
Transistor Type	1 P-Channel
Brand	Texas Instruments
Forward Transconductance - Min	10.4 S
Fall Time	32 ns
Product Type	MOSFET
Rise Time	14 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	70 ns
Typical Turn-On Delay Time	30 ns
Unit Weight	0.000032 oz

For more information, please refer to datasheet

Documents

CSD22205LT Datasheet

More Information

This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.