CSD22206W


YeeHing #: Y012-CSD22206W
Inventory: 3200

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Description

CSD22206W Texas Instruments - Yeehing Electronics

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection

Pricing (USD)

Quantity Unit Price
1 — 99 0.537
100 — 249 0.365
250 — 999 0.281
1,000 + 0.13

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case DSBGA-9
Number of Channels 1 Channel
Transistor Polarity P-Channel
Vds - Drain-Source Breakdown Voltage 8 V
Id - Continuous Drain Current 5 A
Rds On - Drain-Source Resistance 9.1 mOhms
Vgs th - Gate-Source Threshold Voltage 1.05 V
Vgs - Gate-Source Voltage 6 V
Qg - Gate Charge 14.6 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.7 W
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Series CSD22206W
Transistor Type 1 P-Channel
Brand Texas Instruments
Forward Transconductance - Min 20 S
Fall Time 45 ns
Product Type MOSFET
Rise Time 17 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Typical Turn-Off Delay Time 118 ns
Typical Turn-On Delay Time 37 ns
Unit Weight 0.007055 oz

For more information, please refer to datasheet

Documents

CSD22206W Datasheet

More Information

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

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