CSD22206WT Texas Instruments - Yeehing Electronics

-8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 5.7 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	1.111
100 — 249	0.755
250 — 999	0.582
1,000 +	0.27

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-9
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	2 A
Rds On - Drain-Source Resistance	9.1 mOhms
Vgs th - Gate-Source Threshold Voltage	700 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	14.6 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.7 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Series	CSD22206W
Transistor Type	1 P-Channel
Brand	Texas Instruments
Forward Transconductance - Min	20 S
Fall Time	45 ns
Product Type	MOSFET
Rise Time	17 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	118 ns
Typical Turn-On Delay Time	37 ns
Unit Weight	0.007055 oz

For more information, please refer to datasheet

Documents

CSD22206WT Datasheet

More Information

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.