Description
CSD23202W10 Texas Instruments - Yeehing Electronics
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.212 |
| 100 — 249 | 0.163 |
| 250 — 999 | 0.12 |
| 1,000 + | 0.06 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DSBGA-4 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 2.2 A |
| Rds On - Drain-Source Resistance | 92 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 900 mV |
| Vgs - Gate-Source Voltage | 6 V |
| Qg - Gate Charge | 3.8 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.62 mm |
| Length | 1 mm |
| Series | CSD23202W10 |
| Transistor Type | 1 P-Channel |
| Width | 1 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 5.6 S |
| Fall Time | 21 ns |
| Product Type | MOSFET |
| Rise Time | 4 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 58 ns |
| Typical Turn-On Delay Time | 9 ns |
| Unit Weight | 0.007055 oz |
For more information, please refer to datasheet
Documents
More Information
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
