CSD23202W10 Texas Instruments - Yeehing Electronics

-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.212
100 — 249	0.163
250 — 999	0.12
1,000 +	0.06

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-4
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	2.2 A
Rds On - Drain-Source Resistance	92 mOhms
Vgs th - Gate-Source Threshold Voltage	900 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	3.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	1 mm
Series	CSD23202W10
Transistor Type	1 P-Channel
Width	1 mm
Brand	Texas Instruments
Forward Transconductance - Min	5.6 S
Fall Time	21 ns
Product Type	MOSFET
Rise Time	4 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	58 ns
Typical Turn-On Delay Time	9 ns
Unit Weight	0.007055 oz

For more information, please refer to datasheet

Documents

CSD23202W10 Datasheet

More Information

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.