CSD23203W Texas Instruments - Yeehing Electronics

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.319
100 — 249	0.216
250 — 999	0.167
1,000 +	0.02

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-6
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	3 A
Rds On - Drain-Source Resistance	53 mOhms
Vgs th - Gate-Source Threshold Voltage	1.1 V
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	6.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	750 mW
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.625 mm
Length	1.5 mm
Series	CSD23203W
Transistor Type	1 P-Channel
Width	1 mm
Brand	Texas Instruments
Forward Transconductance - Min	14 S
Fall Time	27 ns
Product Type	MOSFET
Rise Time	12 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	58 ns
Typical Turn-On Delay Time	14 ns
Unit Weight	0.000049 oz

For more information, please refer to datasheet

Documents

CSD23203W Datasheet

More Information

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.