Description
CSD23203WT Texas Instruments - Yeehing Electronics
-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.893 |
100 — 249 | 0.606 |
250 — 999 | 0.468 |
1,000 + | 0.22 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | DSBGA-6 |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 8 V |
Id - Continuous Drain Current | 3 A |
Rds On - Drain-Source Resistance | 53 mOhms |
Vgs th - Gate-Source Threshold Voltage | 800 mV |
Vgs - Gate-Source Voltage | 6 V |
Qg - Gate Charge | 4.9 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Tradename | NexFET |
Packaging | Reel |
Height | 0.625 mm |
Length | 1.5 mm |
Series | CSD23203W |
Width | 1 mm |
Brand | Texas Instruments |
Fall Time | 27 ns |
Product Type | MOSFET |
Rise Time | 12 ns |
Factory Pack Quantity | 250 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 58 ns |
Typical Turn-On Delay Time | 14 ns |
Unit Weight | 0.000060 oz |
For more information, please refer to datasheet
Documents
CSD23203WT Datasheet |
More Information
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.