CSD23280F3 Texas Instruments - Yeehing Electronics

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.109
100 — 249	0.074
250 — 999	0.057
1,000 +	0.03

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	1.8 A
Rds On - Drain-Source Resistance	250 mOhms
Vgs th - Gate-Source Threshold Voltage	950 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	950 pC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Channel Mode	Enhancement
Tradename	PicoStar
Packaging	Reel
Height	0.35 mm
Length	0.73 mm
Series	CSD23280F3
Transistor Type	1 P-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	3 S
Fall Time	8 ns
Product Type	MOSFET
Rise Time	4 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	21 ns
Typical Turn-On Delay Time	8 ns
Unit Weight	0.000011 oz

For more information, please refer to datasheet

Documents

CSD23280F3 Datasheet

More Information

This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.