CSD23285F5 Texas Instruments - Yeehing Electronics

-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.238
100 — 249	0.162
250 — 999	0.125
1,000 +	0.06

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	3.3 A
Rds On - Drain-Source Resistance	80 mOhms
Vgs th - Gate-Source Threshold Voltage	950 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	4.2 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.4 W
Configuration	Single
Channel Mode	Enhancement
Tradename	PicoStar
Packaging	Reel
Height	0.35 mm
Length	1.53 mm
Series	CSD23285F5
Transistor Type	1 P-Channel
Width	0.77 mm
Brand	Texas Instruments
Forward Transconductance - Min	8.9 S
Fall Time	13 ns
Product Type	MOSFET
Rise Time	5 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	15 ns
Unit Weight	0.000025 oz

For more information, please refer to datasheet

Documents

CSD23285F5 Datasheet

More Information

This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.