CSD23285F5T Texas Instruments - Yeehing Electronics

-12-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 35 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.812
100 — 249	0.552
250 — 999	0.426
1,000 +	0.20

The above prices are for reference only.

Specifications

For more information, please refer to datasheet

Documents

CSD23285F5T Datasheet

More Information

This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.