Description
CSD23381F4 Texas Instruments - Yeehing Electronics
-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.109 |
100 — 249 | 0.074 |
250 — 999 | 0.057 |
1,000 + | 0.03 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | PICOSTAR-3 |
Number of Channels | 1 Channel |
Transistor Polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 2.3 A |
Rds On - Drain-Source Resistance | 175 mOhms |
Vgs th - Gate-Source Threshold Voltage | 700 mV |
Vgs - Gate-Source Voltage | 4.5 V |
Qg - Gate Charge | 1.14 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 500 mW |
Configuration | Single |
Channel Mode | Enhancement |
Tradename | NexFET |
Packaging | Reel |
Height | 0.35 mm |
Length | 1 mm |
Series | CSD23381F4 |
Transistor Type | 1 P-Channel |
Width | 0.64 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 2 S |
Fall Time | 7 ns |
Product Type | MOSFET |
Rise Time | 3.9 ns |
Factory Pack Quantity | 3000 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 18 ns |
Typical Turn-On Delay Time | 4.5 ns |
Unit Weight | 0.000014 oz |
For more information, please refer to datasheet
Documents
CSD23381F4 Datasheet |
More Information
This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.