CSD23382F4 Texas Instruments - Yeehing Electronics

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.155
100 — 249	0.105
250 — 999	0.081
1,000 +	0.04

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	3.5 A
Rds On - Drain-Source Resistance	76 mOhms
Vgs th - Gate-Source Threshold Voltage	500 mV
Vgs - Gate-Source Voltage	4.5 V
Qg - Gate Charge	1.04 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.35 mm
Length	1 mm
Series	CSD23382F4
Transistor Type	1 P-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	3.4 S
Development Kit	CSD1FPCHEVM-890
Fall Time	41 ns
Product Type	MOSFET
Rise Time	25 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	66 ns
Typical Turn-On Delay Time	28 ns
Unit Weight	0.000014 oz

For more information, please refer to datasheet

Documents

CSD23382F4 Datasheet

More Information

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.