CSD23382F4T


YeeHing #: Y012-CSD23382F4T
Inventory: 7200

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Description

CSD23382F4T Texas Instruments - Yeehing Electronics

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection

Pricing (USD)

Quantity Unit Price
1 — 99 0.729
100 — 249 0.495
250 — 999 0.382
1,000 + 0.18

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case PICOSTAR-3
Number of Channels 1 Channel
Transistor Polarity P-Channel
Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 3.5 A
Rds On - Drain-Source Resistance 199 mOhms
Vgs th - Gate-Source Threshold Voltage 800 mV
Vgs - Gate-Source Voltage 800 mV
Qg - Gate Charge 1.04 nC
Pd - Power Dissipation 500 mW (1/2 W)
Configuration Single
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 0.35 mm
Length 1 mm
Series CSD23382F4
Transistor Type 1 P-Channel
Width 0.64 mm
Brand Texas Instruments
Forward Transconductance - Min 3.4 S
Fall Time 41 ns
Product Type MOSFET
Rise Time 25 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 66 ns
Typical Turn-On Delay Time 28 ns
Unit Weight 0.000014 oz

For more information, please refer to datasheet

Documents

CSD23382F4T Datasheet

More Information

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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