CSD25202W15T Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.889
100 — 249	0.684
250 — 999	0.504
1,000 +	0.25

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-9
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	4 A
Rds On - Drain-Source Resistance	52 mOhms
Vgs th - Gate-Source Threshold Voltage	750 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	5.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	1.5 mm
Series	CSD25202W15
Transistor Type	1 P-Channel
Width	1.5 mm
Brand	Texas Instruments
Forward Transconductance - Min	16 S
Fall Time	28 ns
Product Type	MOSFET
Rise Time	12 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	64 ns
Typical Turn-On Delay Time	15 ns

For more information, please refer to datasheet

Documents

CSD25202W15T Datasheet

More Information

This 21 mΩ, 20 V device is designed to deliver the lowest on resistance and gate charge in a small 1.5 mm × 1.5 mm chip scale package with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.