Texas Instruments
CSD25213W10
CSD25213W10
Regular price
$1.03 USD
Regular price
Sale price
$1.03 USD
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CSD25213W10 Texas Instruments - Yeehing Electronics
-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.18 |
| 100 — 249 | 0.139 |
| 250 — 999 | 0.102 |
| 1,000 + | 1.03 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DSBGA-4 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 1.6 A |
| Rds On - Drain-Source Resistance | 67 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 850 mV |
| Vgs - Gate-Source Voltage | 6 V |
| Qg - Gate Charge | 2.2 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.62 mm |
| Length | 1 mm |
| Series | CSD25213W10 |
| Transistor Type | 1 P-Channel |
| Width | 1 mm |
| Brand | Texas Instruments |
| Fall Time | 970 ns |
| Product Type | MOSFET |
| Rise Time | 520 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 1 us |
| Typical Turn-On Delay Time | 510 ns |
| Unit Weight | 0.000039 oz |
For more information, please refer to datasheet
Documents
| CSD25213W10 Datasheet |
More Information
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
