Description
CSD25213W10 Texas Instruments - Yeehing Electronics
-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.18 |
| 100 — 249 | 0.139 |
| 250 — 999 | 0.102 |
| 1,000 + | 1.03 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | DSBGA-4 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 1.6 A |
| Rds On - Drain-Source Resistance | 67 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 850 mV |
| Vgs - Gate-Source Voltage | 6 V |
| Qg - Gate Charge | 2.2 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.62 mm |
| Length | 1 mm |
| Series | CSD25213W10 |
| Transistor Type | 1 P-Channel |
| Width | 1 mm |
| Brand | Texas Instruments |
| Fall Time | 970 ns |
| Product Type | MOSFET |
| Rise Time | 520 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 1 us |
| Typical Turn-On Delay Time | 510 ns |
| Unit Weight | 0.000039 oz |
For more information, please refer to datasheet
Documents
More Information
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
