CSD25213W10 Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 47 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.18
100 — 249	0.139
250 — 999	0.102
1,000 +	1.03

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-4
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.6 A
Rds On - Drain-Source Resistance	67 mOhms
Vgs th - Gate-Source Threshold Voltage	850 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	2.2 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	1 mm
Series	CSD25213W10
Transistor Type	1 P-Channel
Width	1 mm
Brand	Texas Instruments
Fall Time	970 ns
Product Type	MOSFET
Rise Time	520 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	1 us
Typical Turn-On Delay Time	510 ns
Unit Weight	0.000039 oz

For more information, please refer to datasheet

Documents

CSD25213W10 Datasheet

More Information

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.