CSD25304W1015T Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET single WLP 1 mm x 1.5 mm, 32.5 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.778
100 — 249	0.599
250 — 999	0.441
1,000 +	0.22

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-6
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	3 A
Rds On - Drain-Source Resistance	92 mOhms
Vgs th - Gate-Source Threshold Voltage	800 mV
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	3.3 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.5 W
Configuration	Single
Tradename	NexFET
Packaging	Reel
Height	0.625 mm
Length	1.5 mm
Series	CSD25304W1015
Transistor Type	1 P-Channel
Width	1 mm
Brand	Texas Instruments
Fall Time	10 ns
Product Type	MOSFET
Rise Time	4 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	24 ns
Typical Turn-On Delay Time	6 ns
Unit Weight	0.000060 oz

For more information, please refer to datasheet

Documents

CSD25304W1015T Datasheet

More Information

This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.