Texas Instruments
CSD25310Q2T
CSD25310Q2T
Regular price
$0.21 USD
Regular price
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$0.21 USD
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CSD25310Q2T Texas Instruments - Yeehing Electronics
-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.85 |
| 100 — 249 | 0.577 |
| 250 — 999 | 0.445 |
| 1,000 + | 0.21 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | WSON-FET-6 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 20 A |
| Rds On - Drain-Source Resistance | 19.9 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Vgs - Gate-Source Voltage | 8 V |
| Qg - Gate Charge | 4.7 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.9 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.75 mm |
| Length | 2 mm |
| Series | CSD25310Q2 |
| Width | 2 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 34 S |
| Fall Time | 5 ns |
| Product Type | MOSFET |
| Rise Time | 15 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 8 ns |
For more information, please refer to datasheet
Documents
| CSD25310Q2T Datasheet |
More Information
This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.
