CSD25310Q2T Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.85
100 — 249	0.577
250 — 999	0.445
1,000 +	0.21

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	WSON-FET-6
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	19.9 mOhms
Vgs th - Gate-Source Threshold Voltage	1.1 V
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	4.7 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.9 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.75 mm
Length	2 mm
Series	CSD25310Q2
Width	2 mm
Brand	Texas Instruments
Forward Transconductance - Min	34 S
Fall Time	5 ns
Product Type	MOSFET
Rise Time	15 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	8 ns

For more information, please refer to datasheet

Documents

CSD25310Q2T Datasheet

More Information

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.