CSD25402Q3A Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.9 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.635
100 — 249	0.488
250 — 999	0.36
1,000 +	0.18

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSONP-8
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	76 A
Rds On - Drain-Source Resistance	8.9 mOhms
Vgs th - Gate-Source Threshold Voltage	650 mV
Vgs - Gate-Source Voltage	4.5 V
Qg - Gate Charge	7.5 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C
Pd - Power Dissipation	69 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.9 mm
Length	3.15 mm
Series	CSD25402Q3A
Transistor Type	1 P-Channel Power MOSFET
Width	3 mm
Brand	Texas Instruments
Fall Time	12 ns
Product Type	MOSFET
Rise Time	7 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	10 ns

For more information, please refer to datasheet

Documents

CSD25402Q3A Datasheet

More Information

This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.