CSD25404Q3 Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.5 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.82
100 — 249	0.631
250 — 999	0.464
1,000 +	0.23

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-Clip-8
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	104 A
Rds On - Drain-Source Resistance	6.5 mOhms
Vgs th - Gate-Source Threshold Voltage	650 mV
Vgs - Gate-Source Voltage	4.5 V
Qg - Gate Charge	10.8 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	96 W
Configuration	Single
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	3.3 mm
Series	CSD25404Q3
Transistor Type	1 P-Channel Power MOSFET
Width	3.3 mm
Brand	Texas Instruments
Fall Time	13 ns
Product Type	MOSFET
Rise Time	8 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	13 ns
Unit Weight	0.001549 oz

For more information, please refer to datasheet

Documents

CSD25404Q3 Datasheet

More Information

This -20 V, 5.5 mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.