CSD25481F4 Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.152
100 — 249	0.103
250 — 999	0.08
1,000 +	0.04

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.5 A
Rds On - Drain-Source Resistance	800 mOhms
Vgs th - Gate-Source Threshold Voltage	950 mV
Vgs - Gate-Source Voltage	12 V
Qg - Gate Charge	913 pC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Tradename	NexFET
Packaging	Reel
Height	0.35 mm
Length	1 mm
Series	CSD25481F4
Transistor Type	1 P-Channel
Width	0.64 mm
Brand	Texas Instruments
Forward Transconductance - Min	3.3 S
Fall Time	6.7 ns
Product Type	MOSFET
Rise Time	3.6 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	16.9 ns
Typical Turn-On Delay Time	4.1 ns
Unit Weight	0.000014 oz

For more information, please refer to datasheet

Documents

CSD25481F4 Datasheet

More Information

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.