CSD25481F4T


YeeHing #: Y012-CSD25481F4T
Inventory: 7800

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Description

CSD25481F4T Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Pricing (USD)

Quantity Unit Price
1 — 99 0.726
100 — 249 0.493
250 — 999 0.381
1,000 + 0.18

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case PICOSTAR-3
Number of Channels 1 Channel
Transistor Polarity P-Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2.5 A
Rds On - Drain-Source Resistance 800 mOhms
Vgs th - Gate-Source Threshold Voltage 950 mV
Vgs - Gate-Source Voltage 12 V
Qg - Gate Charge 913 pC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW (1/2 W)
Configuration Single
Channel Mode Enhancement
Tradename FemtoFET
Packaging Reel
Height 0.35 mm
Length 1 mm
Series CSD25481F4
Transistor Type 1 P-Channel
Type FemtoFET MOSFET
Width 0.64 mm
Brand Texas Instruments
Forward Transconductance - Min 3.3 S
Fall Time 6.7 ns
Product Type MOSFET
Rise Time 3.6 ns
Factory Pack Quantity 250
Subcategory MOSFETs
Typical Turn-Off Delay Time 16.9 ns
Typical Turn-On Delay Time 4.1 ns
Unit Weight 0.000014 oz

For more information, please refer to datasheet

Documents

CSD25481F4T Datasheet

More Information

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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