CSD25484F4 Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.172
100 — 249	0.117
250 — 999	0.09
1,000 +	0.04

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-3
Number of Channels	1 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.5 A
Rds On - Drain-Source Resistance	825 mOhms
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vgs - Gate-Source Voltage	12 V
Qg - Gate Charge	1.09 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	500 mW (1/2 W)
Configuration	Single
Channel Mode	Enhancement
Packaging	Reel
Height	0.2 mm
Length	1 mm
Series	CSD25484F4
Transistor Type	1 P-Channel
Width	0.6 mm
Brand	Texas Instruments
Forward Transconductance - Min	3.5 S
Fall Time	8.5 ns
Product Type	MOSFET
Rise Time	5 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	9.5 ns
Unit Weight	0.000014 oz

For more information, please refer to datasheet

Documents

CSD25484F4 Datasheet

More Information

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.