Description
CSD25485F5 Texas Instruments - Yeehing Electronics
-20-V, P channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 42 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.238 |
| 100 — 249 | 0.162 |
| 250 — 999 | 0.125 |
| 1,000 + | 0.07 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | PICOSTAR-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 3.2 A |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Vgs - Gate-Source Voltage | 12 V |
| Qg - Gate Charge | 3.5 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.4 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | PicoStar |
| Packaging | Reel |
| Height | 0.35 mm |
| Length | 1.53 mm |
| Series | CSD25485F5 |
| Transistor Type | 1 P-Channel |
| Width | 0.77 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 7 S |
| Fall Time | 14 ns |
| Product Type | MOSFET |
| Rise Time | 6 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time | 14 ns |
| Unit Weight | 0.000025 oz |
For more information, please refer to datasheet
Documents
| CSD25485F5 Datasheet |
More Information
This 29.7-mΩ, –20-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
