CSD75207W15 Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1.5 mm x 1.5 mm, 27 mOhm, gate ESD pro

Pricing (USD)

Quantity	Unit Price
1 — 99	0.408
100 — 249	0.314
250 — 999	0.231
1,000 +	0.12

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-9
Number of Channels	2 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	3.9 A
Rds On - Drain-Source Resistance	54 mOhms
Vgs th - Gate-Source Threshold Voltage	600 mV
Vgs - Gate-Source Voltage	4.5 V
Qg - Gate Charge	2.9 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	0.7 W
Configuration	Dual
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	1.5 mm
Series	CSD75207W15
Transistor Type	2 P-Channel
Width	1.5 mm
Brand	Texas Instruments
Forward Transconductance - Min	6.2 S
Fall Time	16 ns
Product Type	MOSFET
Rise Time	8.6 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	32.1 ns
Typical Turn-On Delay Time	12.8 ns
Unit Weight	0.000088 oz

For more information, please refer to datasheet

Documents

CSD75207W15 Datasheet

More Information

The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.