CSD75208W1015 Texas Instruments - Yeehing Electronics

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot

Pricing (USD)

Quantity	Unit Price
1 — 99	0.299
100 — 249	0.23
250 — 999	0.169
1,000 +	0.08

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-6
Number of Channels	2 Channel
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	1.6 A
Rds On - Drain-Source Resistance	150 mOhms, 285 mOhms
Vgs th - Gate-Source Threshold Voltage	800 mV
Vgs - Gate-Source Voltage	6 V
Qg - Gate Charge	1.9 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	750 mW (3/4 W)
Configuration	Dual
Tradename	NexFET
Packaging	Reel
Height	0.625 mm
Length	1.5 mm
Series	CSD75208W1015
Transistor Type	2 P-Channel
Width	1 mm
Brand	Texas Instruments
Fall Time	11 ns
Product Type	MOSFET
Rise Time	5 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	29 ns
Typical Turn-On Delay Time	9 ns
Unit Weight	0.000060 oz

For more information, please refer to datasheet

Documents

CSD75208W1015 Datasheet

More Information

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.