CSD83325L Texas Instruments - Yeehing Electronics

12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.442
100 — 249	0.3
250 — 999	0.232
1,000 +	0.11

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	BGA-6
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	8 A
Rds On - Drain-Source Resistance	5.9 mOhms
Vgs th - Gate-Source Threshold Voltage	950 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	8.4 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.3 W
Configuration	Dual
Tradename	NexFET
Packaging	Reel
Height	0.2 mm
Length	2.2 mm
Product	Power MOSFET
Series	CSD83325L
Transistor Type	2 N-Channel
Width	1.15 mm
Brand	Texas Instruments
Forward Transconductance - Min	36 S
Fall Time	589 ns
Product Type	MOSFET
Rise Time	353 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	711 ns
Typical Turn-On Delay Time	205 ns
Unit Weight	0.000053 oz

For more information, please refer to datasheet

Documents

CSD83325L Datasheet

More Information

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.