Texas Instruments
CSD83325L
CSD83325L
Regular price
$0.11 USD
Regular price
Sale price
$0.11 USD
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CSD83325L Texas Instruments - Yeehing Electronics
12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.442 |
| 100 — 249 | 0.3 |
| 250 — 999 | 0.232 |
| 1,000 + | 0.11 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | BGA-6 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Id - Continuous Drain Current | 8 A |
| Rds On - Drain-Source Resistance | 5.9 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 950 mV |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 8.4 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.3 W |
| Configuration | Dual |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 0.2 mm |
| Length | 2.2 mm |
| Product | Power MOSFET |
| Series | CSD83325L |
| Transistor Type | 2 N-Channel |
| Width | 1.15 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 36 S |
| Fall Time | 589 ns |
| Product Type | MOSFET |
| Rise Time | 353 ns |
| Factory Pack Quantity | 250 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 711 ns |
| Typical Turn-On Delay Time | 205 ns |
| Unit Weight | 0.000053 oz |
For more information, please refer to datasheet
Documents
| CSD83325L Datasheet |
More Information
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
