Description
CSD83325LT Texas Instruments - Yeehing Electronics
12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
Pricing (USD)
Quantity | Unit Price |
1 — 99 | 0.874 |
100 — 249 | 0.673 |
250 — 999 | 0.495 |
1,000 + | 0.25 |
The above prices are for reference only.
Specifications
Manufacturer | Texas Instruments |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | BGA-6 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 8 A |
Rds On - Drain-Source Resistance | 5.9 mOhms |
Vgs th - Gate-Source Threshold Voltage | 950 mV |
Vgs - Gate-Source Voltage | 10 V |
Qg - Gate Charge | 8.4 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.3 W |
Configuration | Dual |
Tradename | NexFET |
Packaging | Reel |
Height | 0.2 mm |
Length | 2.2 mm |
Product | Power MOSFET |
Series | CSD83325L |
Transistor Type | 2 N-Channel |
Width | 1.15 mm |
Brand | Texas Instruments |
Forward Transconductance - Min | 36 S |
Fall Time | 589 ns |
Product Type | MOSFET |
Rise Time | 353 ns |
Factory Pack Quantity | 250 |
Subcategory | MOSFETs |
Typical Turn-Off Delay Time | 711 ns |
Typical Turn-On Delay Time | 205 ns |
Unit Weight | 0.000053 oz |
For more information, please refer to datasheet
Documents
CSD83325LT Datasheet |
More Information
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.