CSD85301Q2 Texas Instruments - Yeehing Electronics

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.309
100 — 249	0.238
250 — 999	0.175
1,000 +	0.09

The above prices are for reference only.

Specifications

For more information, please refer to datasheet

Documents

CSD85301Q2 Datasheet

More Information

The CSD85301Q2 is a 20 V, 23 mΩ N-Channel device with dual independent MOSFETs in a SON 2 × 2 mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.