CSD85301Q2T Texas Instruments - Yeehing Electronics

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection

Pricing (USD)

Quantity	Unit Price
1 — 99	0.803
100 — 249	0.618
250 — 999	0.455
1,000 +	0.23

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	WSON-FET-6
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	27 mOhms
Vgs th - Gate-Source Threshold Voltage	600 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	5.4 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.3 W
Configuration	Dual
Tradename	NexFET
Packaging	Reel
Height	0.75 mm
Length	2 mm
Series	CSD85301Q2
Transistor Type	2 N-Channel
Width	2 mm
Brand	Texas Instruments
Fall Time	15 ns
Product Type	MOSFET
Rise Time	26 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	14 ns
Typical Turn-On Delay Time	6 ns
Unit Weight	0.000342 oz

For more information, please refer to datasheet

Documents

CSD85301Q2T Datasheet

More Information

The CSD85301Q2 is a 20 V, 23 mΩ N-Channel device with dual independent MOSFETs in a SON 2 × 2 mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.