CSD85302LT Texas Instruments - Yeehing Electronics

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Pricing (USD)

Quantity	Unit Price
1 — 99	0.947
100 — 249	0.644
250 — 999	0.497
1,000 +	0.26

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	PICOSTAR-4
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	7 A
Rds On - Drain-Source Resistance	24 mOhms
Vgs th - Gate-Source Threshold Voltage	680 mV
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	6 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.7 W
Configuration	Dual
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	0.22 mm
Length	1.35 mm
Series	CSD85302L
Transistor Type	2 N-Channel
Width	1.35 mm
Brand	Texas Instruments
Fall Time	99 ns
Product Type	MOSFET
Rise Time	54 ns
Factory Pack Quantity	250
Subcategory	MOSFETs
Typical Turn-Off Delay Time	173 ns
Typical Turn-On Delay Time	37 ns
Unit Weight	0.000042 oz

For more information, please refer to datasheet

Documents

CSD85302LT Datasheet

More Information

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.