CSD85312Q3E Texas Instruments - Yeehing Electronics

20-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3, 14 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.914
100 — 249	0.703
250 — 999	0.518
1,000 +	0.30

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	VSON-8
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	12 A
Rds On - Drain-Source Resistance	14 mOhms
Vgs th - Gate-Source Threshold Voltage	1.1 V
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	11.7 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W
Configuration	Dual
Tradename	NexFET
Packaging	Reel
Height	1 mm
Length	3.3 mm
Series	CSD85312Q3E
Transistor Type	2 N-Channel
Width	3.3 mm
Brand	Texas Instruments
Forward Transconductance - Min	99 S
Fall Time	6 ns
Product Type	MOSFET
Rise Time	27 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	24 ns
Typical Turn-On Delay Time	11 ns
Unit Weight	0.001129 oz

For more information, please refer to datasheet

Documents

CSD85312Q3E Datasheet

More Information

The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.