Texas Instruments
CSD85312Q3E
CSD85312Q3E
Regular price
$0.30 USD
Regular price
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$0.30 USD
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CSD85312Q3E Texas Instruments - Yeehing Electronics
20-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3, 14 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 0.914 |
| 100 — 249 | 0.703 |
| 250 — 999 | 0.518 |
| 1,000 + | 0.30 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-8 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance | 14 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 11.7 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.5 W |
| Configuration | Dual |
| Tradename | NexFET |
| Packaging | Reel |
| Height | 1 mm |
| Length | 3.3 mm |
| Series | CSD85312Q3E |
| Transistor Type | 2 N-Channel |
| Width | 3.3 mm |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 99 S |
| Fall Time | 6 ns |
| Product Type | MOSFET |
| Rise Time | 27 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 24 ns |
| Typical Turn-On Delay Time | 11 ns |
| Unit Weight | 0.001129 oz |
For more information, please refer to datasheet
Documents
| CSD85312Q3E Datasheet |
More Information
The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
