• CSD86311W1723, Texas Instruments, Yeehing Electronics
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Texas Instruments

CSD86311W1723

CSD86311W1723

$0.22 USD
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CSD86311W1723 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 0.763
100 — 249 0.587
250 — 999 0.432
1,000 + 0.22

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS Y
Technology Si
Mounting Style SMD/SMT
Package / Case DSBGA-12
Number of Channels 2 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 5 A
Rds On - Drain-Source Resistance 42 mOhms
Vgs th - Gate-Source Threshold Voltage 1 V
Vgs - Gate-Source Voltage 10 V
Qg - Gate Charge 3.1 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.5 W
Configuration Dual
Tradename NexFET
Packaging Reel
Height 0.62 mm
Length 2.32 mm
Series CSD86311W1723
Transistor Type 2 N-Channel
Width 1.74 mm
Brand Texas Instruments
Forward Transconductance - Min 6.4 S
Fall Time 2.9 ns
Product Type MOSFET
Rise Time 4.3 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Typical Turn-Off Delay Time 13.2 ns
Typical Turn-On Delay Time 5.4 ns
Unit Weight 0.000145 oz

For more information, please refer to datasheet

Documents

CSD86311W1723 Datasheet

More Information

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

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