CSD86311W1723 Texas Instruments - Yeehing Electronics

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Pricing (USD)

Quantity	Unit Price
1 — 99	0.763
100 — 249	0.587
250 — 999	0.432
1,000 +	0.22

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	DSBGA-12
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	42 mOhms
Vgs th - Gate-Source Threshold Voltage	1 V
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	3.1 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1.5 W
Configuration	Dual
Tradename	NexFET
Packaging	Reel
Height	0.62 mm
Length	2.32 mm
Series	CSD86311W1723
Transistor Type	2 N-Channel
Width	1.74 mm
Brand	Texas Instruments
Forward Transconductance - Min	6.4 S
Fall Time	2.9 ns
Product Type	MOSFET
Rise Time	4.3 ns
Factory Pack Quantity	3000
Subcategory	MOSFETs
Typical Turn-Off Delay Time	13.2 ns
Typical Turn-On Delay Time	5.4 ns
Unit Weight	0.000145 oz

For more information, please refer to datasheet

Documents

CSD86311W1723 Datasheet

More Information

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications