CSD86330Q3D Texas Instruments - Yeehing Electronics

25-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 20 A

Pricing (USD)

Quantity	Unit Price
1 — 99	1.523
100 — 249	1.258
250 — 999	0.904
1,000 +	0.48

The above prices are for reference only.

Specifications

Manufacturer	Texas Instruments
Product Category	MOSFET
RoHS	E
Technology	Si
Mounting Style	SMD/SMT
Package / Case	LSON-CLIP-8
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	4.5 A
Vgs th - Gate-Source Threshold Voltage	900 mV
Vgs - Gate-Source Voltage	5 V
Qg - Gate Charge	4.8 nC, 9.2 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	6 W
Configuration	Dual
Channel Mode	Enhancement
Tradename	NexFET
Packaging	Reel
Height	1.5 mm
Length	3.3 mm
Series	CSD86330Q3D
Transistor Type	2 N-Channel
Width	3.3 mm
Brand	Texas Instruments
Forward Transconductance - Min	52 S, 82 S
Development Kit	CSD86330EVM-717, TPS40322EVM-679
Fall Time	1.9 ns, 4.2 ns
Product Type	MOSFET
Rise Time	7.5 ns, 6.3 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	8.5 ns, 15.8 ns
Typical Turn-On Delay Time	4.9 ns, 5.3 ns
Unit Weight	0.002254 oz

For more information, please refer to datasheet

Documents

CSD86330Q3D Datasheet

More Information

The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5 V gate drive applications, this product offers a flexible solution capable of offering a high density power supply when paired with any 5 V gate drive from an external controller/driver.