CSD86350Q5D Texas Instruments - Yeehing Electronics

25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A

Pricing (USD)

Quantity	Unit Price
1 — 99	1.989
100 — 249	1.643
250 — 999	1.18
1,000 +	0.62

The above prices are for reference only.

Specifications

Manufacturer	Infineon
Product Category	MOSFET
RoHS	Y
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	20 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	10 V
Qg - Gate Charge	23 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	150 W
Configuration	Single
Channel Mode	Enhancement
Tradename	OptiMOS
Packaging	Reel
Height	2.3 mm
Length	6.5 mm
Series	OptiMOS 3
Transistor Type	1 N-Channel
Width	6.22 mm
Brand	Infineon Technologies
Forward Transconductance - Min	29 S
Fall Time	6 ns
Product Type	MOSFET
Rise Time	11 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Typical Turn-Off Delay Time	23 ns
Typical Turn-On Delay Time	14 ns
Part # Aliases	G IPD200N15N3 SP001127820
Unit Weight	0.139332 oz

For more information, please refer to datasheet

Documents

CSD86350Q5D Datasheet

More Information

The CSD86350Q5D NexFET™ power block is an optimized design for synchronous buck applications offering high-current, high-efficiency, and high-frequency capability in a small 5-mm × 6-mm outline. Optimized for 5-V gate drive applications, this product offers a flexible solution capable of offering a high-density power supply when paired with any 5-V gate drive from an external controller/driver.