CSD87312Q3E


YeeHing #: Y012-CSD87312Q3E
Inventory: 7000

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Description

CSD87312Q3E Texas Instruments - Yeehing Electronics

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm

Pricing (USD)

Quantity Unit Price
1 — 99 1.187
100 — 249 0.981
250 — 999 0.704
1,000 + 0.37

The above prices are for reference only.

Specifications

Manufacturer Texas Instruments
Product Category MOSFET
RoHS E
Technology Si
Mounting Style SMD/SMT
Package / Case VSON-8
Number of Channels 2 Channel
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 27 A
Rds On - Drain-Source Resistance 33 mOhms
Vgs th - Gate-Source Threshold Voltage 800 mV
Vgs - Gate-Source Voltage 8 V
Qg - Gate Charge 6.3 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2.5 W
Configuration Dual
Channel Mode Enhancement
Tradename NexFET
Packaging Reel
Height 1 mm
Length 3.3 mm
Series CSD87312Q3E
Transistor Type 2 N-Channel
Width 3.3 mm
Brand Texas Instruments
Forward Transconductance - Min 39 S
Fall Time 2.9 ns
Product Type MOSFET
Rise Time 16 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 7.8 ns
Unit Weight 0.001101 oz

For more information, please refer to datasheet

Documents

CSD87312Q3E Datasheet

More Information

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

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