Texas Instruments
CSD87313DMS
CSD87313DMS
Regular price
$0.41 USD
Regular price
Sale price
$0.41 USD
Unit price
per
Couldn't load pickup availability
CSD87313DMS Texas Instruments - Yeehing Electronics
30-V, N channel NexFET™ power MOSFET, dual common drain SON 3 mm x 3 mm, 5.5 mOhm
Pricing (USD)
| Quantity | Unit Price |
| 1 — 99 | 1.301 |
| 100 — 249 | 1.075 |
| 250 — 999 | 0.772 |
| 1,000 + | 0.41 |
The above prices are for reference only.
Specifications
| Manufacturer | Texas Instruments |
| Product Category | MOSFET |
| RoHS | E |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | WSON-8 |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 17 A |
| Rds On - Drain-Source Resistance | 5.5 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Vgs - Gate-Source Voltage | 10 V |
| Qg - Gate Charge | 28 nC, 28 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.7 W |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Tradename | NexFET |
| Packaging | Reel |
| Series | CSD87313DMS |
| Transistor Type | 2 N-Channel |
| Brand | Texas Instruments |
| Forward Transconductance - Min | 149 S, 149 S |
| Fall Time | 13 ns, 13 ns |
| Product Type | MOSFET |
| Rise Time | 27 ns, 27 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 41 ns, 41 ns |
| Typical Turn-On Delay Time | 9 ns, 9 ns |
For more information, please refer to datasheet
Documents
| CSD87313DMS Datasheet |
More Information
The CSD87313DMS is a 30-V common drain, dual N-channel device designed for USB Type-C/PD and battery protection. This SON 3.3-mm × 3.3-mm device has low-source-to-source on resistance that minimizes losses and offers low-component count for space constrained applications.
